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TIP142
Central Semiconductor CorpRoHS
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Package TO-218-3
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 1000 @ 5A 4V 10A 125W 100V
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Inventory: 301
Minimum: 1
Total Price: USD $1.16
Unit Price: USD $1.1552
≥1 USD $1.1552
≥10 USD $0.9481
≥30 USD $0.9177
≥100 USD $0.88825
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-218-3
Transistor Element Material SILICON
Compliance
RoHS Status Non-RoHS Compliant
Technical
Operating Temperature -65°C~150°C TJ
Packaging Bulk
Published 2012
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Max Power Dissipation 125W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 125W
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A 4V
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 100V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 1000
Continuous Collector Current 10A
Alternative Model
No data
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