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MJE3055TTU
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
Bipolar Transistors - BJT NPN Sil Transistor
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Inventory: 8637
Minimum: 1
Total Price: USD $0.48
Unit Price: USD $0.48165
≥1 USD $0.48165
≥10 USD $0.3952
≥100 USD $0.38285
≥500 USD $0.3705
≥1000 USD $0.35815
Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tube
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 60V
Max Power Dissipation 75W
Current Rating 10A
Frequency 2MHz
Base Part Number MJE3055
Number of Elements 1
Element Configuration Single
Power Dissipation 600mW
Power - Max 75W
Transistor Application SWITCHING
Gain Bandwidth Product 2MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A 4V
Current - Collector Cutoff (Max) 700μA
Vce Saturation (Max) @ Ib, Ic 8V @ 3.3A, 10A
Collector Emitter Breakdown Voltage 525V
Transition Frequency 2MHz
Collector Emitter Saturation Voltage 1.1V
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 70V
Emitter Base Voltage (VEBO) 5V
hFE Min 20
Dimensions
Height 14.2mm
Length 9.9mm
Width 4.5mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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