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MJE172STU
ON SemiconductorRoHS
/
Package TO-225AA, TO-126-3
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
Tube Through Hole PNP Single Bipolar (BJT) Transistor 50 @ 100mA 1V 100nA ICBO 12.5W 50MHz
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Inventory: 7567
Minimum: 1
Total Price: USD $0.19
Unit Price: USD $0.19
≥1 USD $0.19
≥10 USD $0.15675
≥100 USD $0.15105
≥500 USD $0.1463
≥1000 USD $0.14155
Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 6 days ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3
Weight 761mg
Transistor Element Material SILICON
Dimensions
Height 11mm
Length 8mm
Width 3.25mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Technical
Operating Temperature 150°C TJ
Packaging Tube
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -80V
Max Power Dissipation 12.5W
Current Rating -3A
Frequency 50MHz
Base Part Number MJE172
Number of Elements 1
Element Configuration Single
Power Dissipation 1.5W
Transistor Application SWITCHING
Gain Bandwidth Product 50MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.7V @ 600mA, 3A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage -1.7V
Max Breakdown Voltage 110V
Collector Base Voltage (VCBO) -100V
Emitter Base Voltage (VEBO) -7V
hFE Min 50
Alternative Model
No data
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