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BC32716
ON SemiconductorRoHS
/
Package TO-226-3, TO-92-3 (TO-226AA)
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole PNP Single Bipolar (BJT) Transistor 100 @ 100mA 1V 800mA 625mW 100MHz
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Inventory: 6622
Minimum: 1
Total Price: USD $0.07
Unit Price: USD $0.065836
≥1 USD $0.065836
≥500 USD $0.048405
≥1000 USD $0.040345
≥2000 USD $0.037015
≥5000 USD $0.034584
≥10000 USD $0.032174
≥15000 USD $0.031112
≥50000 USD $0.030595
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Supplier Device Package TO-92-3
Weight 200mg
Compliance
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Technical
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC -45V
Max Power Dissipation 625mW
Current Rating -800mA
Frequency 100MHz
Base Part Number BC327
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 625mW
Power - Max 625mW
Gain Bandwidth Product 100MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 700mV
Max Collector Current 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 45V
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 800mA
Collector Emitter Saturation Voltage -700mV
Frequency - Transition 100MHz
Emitter Base Voltage (VEBO) -5V
hFE Min 100
Alternative Model
No data
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