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MPS4124RLRAG
ON SemiconductorRoHS
/
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
Cut Tape (CT) Through Hole NPN Single Bipolar (BJT) Transistor 120 @ 2mA 1V 50nA ICBO 625mW 170MHz
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Inventory: 8549
Minimum: 1
Total Price: USD $0.69
Unit Price: USD $0.68875
≥1 USD $0.68875
≥10 USD $0.56525
≥100 USD $0.5472
≥500 USD $0.5301
≥1000 USD $0.51205
Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Physical
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Dimensions
Height 6.35mm
Length 6.35mm
Width 6.35mm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2007
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC 25V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating 200mA
Frequency 170MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MPS4124
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 625W
Transistor Application AMPLIFIER
Gain Bandwidth Product 170MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA 1V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 25V
Transition Frequency 170MHz
Collector Emitter Saturation Voltage 300mV
Max Breakdown Voltage 25V
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 5V
hFE Min 120
Compliance
Radiation Hardening No
REACH SVHC Unknown
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
No data
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