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2SC4793(F,M)
Toshiba Semiconductor and StorageRoHS
/
Package TO-220-3 Full Pack
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
Transistor GP BJT NPN 230V 1A 3-Pin (3+Tab) TO-220(NIS)
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Inventory: 943
Minimum: 1
Total Price: USD $0.98
Unit Price: USD $0.977454
≥1 USD $0.977454
≥10 USD $0.922127
≥100 USD $0.869931
≥500 USD $0.820684
≥1000 USD $0.774234
Technical Details
Physical
Contact Plating Copper, Silver, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Supplier Device Package TO-220NIS
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Technical
Operating Temperature 150°C TJ
Packaging Tube
Published 2004
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 230V
Max Power Dissipation 2W
Current Rating 1A
Frequency 100MHz
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 2W
Power - Max 2W
Gain Bandwidth Product 100MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 230V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 5V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA
Collector Emitter Breakdown Voltage 230V
Voltage - Collector Emitter Breakdown (Max) 230V
Current - Collector (Ic) (Max) 1A
Max Frequency 100MHz
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 230V
Emitter Base Voltage (VEBO) 5V
hFE Min 100
Continuous Collector Current 1A
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