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2N5550G
ON SemiconductorRoHS
/
Package TO-226-3, TO-92-3 (TO-226AA)
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 60 @ 10mA 5V 100nA ICBO 625mW 300MHz
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Inventory: 7327
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Total Price: USD $0.52
Unit Price: USD $0.516593
≥1 USD $0.516593
≥10 USD $0.487353
≥100 USD $0.45976
≥500 USD $0.433739
≥1000 USD $0.409189
Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 6 days ago)
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2001
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC 140V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating 600mA
Frequency 300MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number 2N5550
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 625mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 140V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 140V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 250mV
Collector Base Voltage (VCBO) 160V
Emitter Base Voltage (VEBO) 6V
hFE Min 60
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Dimensions
Height 5.33mm
Length 5.2mm
Width 4.19mm
Physical
Contact Plating Copper, Silver, Tin
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Alternative Model
No data
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