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2N4401RLRAG
ON SemiconductorRoHS
/
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
Cut Tape (CT) Through Hole General Purpose Single Bipolar (BJT) Transistor 100 @ 150mA 1V 600mA 625mW 250MHz
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Inventory: 7910
Minimum: 1
Total Price: USD $0.07
Unit Price: USD $0.06935
≥1 USD $0.06935
≥500 USD $0.057
≥1000 USD $0.0551
≥2000 USD $0.0532
≥5000 USD $0.05225
≥10000 USD $0.04655
Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Physical
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Dimensions
Height 5.33mm
Length 5.2mm
Width 4.19mm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2007
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Type General Purpose
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC 40V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Current Rating 600mA
Frequency 250MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number 2N4401
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 625mW
Transistor Application SWITCHING
Gain Bandwidth Product 250MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 1V
Vce Saturation (Max) @ Ib, Ic 750mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 250MHz
Collector Emitter Saturation Voltage 750mV
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
hFE Min 20
Turn Off Time-Max (toff) 255ns
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
No data
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