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MMBTA55-7
Diodes IncorporatedRoHS
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Package TO-236-3, SC-59, SOT-23-3
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
Bipolar Transistors - BJT 100V 300mW
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Inventory: 985
Minimum: 1
Total Price: USD $0.09
Unit Price: USD $0.09405
≥1 USD $0.09405
≥500 USD $0.0779
≥1000 USD $0.07505
≥2000 USD $0.07315
≥5000 USD $0.0703
≥10000 USD $0.0627
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Dimensions
Height 1mm
Length 3.05mm
Width 1.4mm
Compliance
REACH SVHC No SVHC
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series Automotive, AEC-Q101
JESD-609 Code e0
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn85Pb15)
Voltage - Rated DC -60V
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 235
Reach Compliance Code not_compliant
Current Rating -100mA
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number MMBTA55
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power - Max 300mW
Transistor Application SWITCHING
Gain Bandwidth Product 50MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 60V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage -250mV
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) -60V
Emitter Base Voltage (VEBO) -4V
hFE Min 100
Continuous Collector Current -500mA
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