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2N5830
ON SemiconductorRoHS
/
Package TO-226-3, TO-92-3 (TO-226AA)
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 80 @ 10mA 5V 200mA 625mW 120V
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Inventory: 3590
Minimum: 1
Total Price: USD $0.34
Unit Price: USD $0.337635
≥1 USD $0.337635
≥10 USD $0.318525
≥100 USD $0.300494
≥500 USD $0.283493
≥1000 USD $0.267441
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Supplier Device Package TO-92-3
Weight 201mg
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 1997
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 100V
Max Power Dissipation 625mW
Current Rating 200mA
Base Part Number 2N5830
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 625mW
Power - Max 625mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 100V
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 200mA
Collector Emitter Saturation Voltage 250mV
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 5V
hFE Min 80
Alternative Model
No data
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