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MMJT9435T1

ON Semiconductor
RoHS
/
Package TO-261-4, TO-261AA
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description Tape & Reel (TR) Surface Mount PNP Single Bipolar (BJT) Transistor 125 @ 800mA 1V -3A 3W 110MHz
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Inventory: 4166
Minimum: 1
Total Price: USD $22.79
Unit Price: USD $22.7867
≥1 USD $22.7867
≥10 USD $18.69695
≥100 USD $18.1127
≥500 USD $17.52845
≥1000 USD $16.9442

Technical Details

Supply Chain

Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Voltage - Rated DC -30V
Max Power Dissipation 3W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating -3A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number MMJT9435
Pin Count 4
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Power - Max 3W
Gain Bandwidth Product 110MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 550mV
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 800mA 1V
Vce Saturation (Max) @ Ib, Ic 550mV @ 300mA, 3A
Collector Emitter Breakdown Voltage 30V
Transition Frequency 110MHz
Collector Emitter Saturation Voltage 155mV
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 45V
Emitter Base Voltage (VEBO) 6V
hFE Min 125

Alternative Model

No data

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