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2N6520RLRA
ON SemiconductorRoHS
/
Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
TRANS PNP 350V 0.5A TO92
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Inventory: 4621
Minimum: 1
Total Price: USD $3.18
Unit Price: USD $3.184013
≥1 USD $3.184013
≥10 USD $3.003786
≥100 USD $2.833767
≥500 USD $2.673359
≥1000 USD $2.522042
Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Physical
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.21.00.95
Subcategory Other Transistors
Voltage - Rated DC -350V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating -500mA
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number 2N6520
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power - Max 625mW
Transistor Application SWITCHING
Gain Bandwidth Product 200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 1V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 50mA 10V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 5mA, 50mA
Collector Emitter Breakdown Voltage 350V
Transition Frequency 40MHz
Collector Emitter Saturation Voltage 1V
Max Breakdown Voltage 350V
Collector Base Voltage (VCBO) 350V
Emitter Base Voltage (VEBO) 5V
hFE Min 20
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Alternative Model
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