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2N5884

ON Semiconductor
RoHS
/
Package TO-204AA, TO-3
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description Tray Through Hole PNP Single Bipolar (BJT) Transistor 20 @ 10A 4V 25A 200W 4MHz
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Inventory: 5492
Minimum: 1
Total Price: USD $143.41
Unit Price: USD $143.410693
≥1 USD $143.410693
≥200 USD $57.221434
≥500 USD $55.309851
≥1000 USD $54.364563

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Number of Pins 2
Transistor Element Material SILICON

Dimensions

Height 8.51mm
Length 39.37mm
Width 26.67mm

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

Technical

Operating Temperature -65°C~200°C TJ
Packaging Tray
Published 2006
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Subcategory Other Transistors
Voltage - Rated DC -80V
Max Power Dissipation 200W
Terminal Position BOTTOM
Terminal Form PIN/PEG
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating -25A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number 2N5884
Pin Count 2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 200W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 4MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 4V
Max Collector Current 25A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 10A 4V
Current - Collector Cutoff (Max) 2mA
Vce Saturation (Max) @ Ib, Ic 4V @ 6.25A, 25A
Collector Emitter Breakdown Voltage 80V
Current - Collector (Ic) (Max) 25A
Max Frequency 4MHz
Transition Frequency 4MHz
Collector Emitter Saturation Voltage 1V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 35

Alternative Model

No data

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