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2N3906RLRA
ON SemiconductorRoHS
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Package TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
TRANS PNP 40V 0.2A TO92
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Inventory: 2729
Minimum: 1
Total Price: USD $0.04
Unit Price: USD $0.039643
≥1 USD $0.039643
≥500 USD $0.029145
≥1000 USD $0.024291
≥2000 USD $0.022289
≥5000 USD $0.020829
≥10000 USD $0.019372
≥15000 USD $0.018743
≥50000 USD $0.01842
Technical Details
Supply Chain
Lifecycle Status OBSOLETE (Last Updated: 1 week ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2007
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn80Pb20)
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC -40V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating -200mA
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number 2N3906
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 625mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 250MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Current - Collector Cutoff (Max) 50nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 40V
Current - Collector (Ic) (Max) 200mA
Transition Frequency 250MHz
Collector Emitter Saturation Voltage 400mV
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
hFE Min 60
Turn On Time-Max (ton) 70 ns
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Alternative Model
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