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2N6490G

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description ON SEMICONDUCTOR - 2N6490G - Bipolar (BJT) Single Transistor, General Purpose, PNP, 60 V, 5 MHz, 1.8 W, -15 A, 5 hFE
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Inventory: 4202
Minimum: 1
Total Price: USD $4.18
Unit Price: USD $4.181528
≥1 USD $4.181528
≥10 USD $3.94483
≥100 USD $3.721541
≥500 USD $3.510885
≥1000 USD $3.312161

Technical Details

Supply Chain

Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 13 hours ago)

Dimensions

Height 15.75mm
Length 10.28mm
Width 4.82mm

Technical

Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 60V
Max Power Dissipation 1.8W
Peak Reflow Temperature (Cel) 260
Current Rating 15A
Frequency 5MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number 2N6490
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1.8W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 5MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5A 4V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 3.5V @ 5A, 15A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 5MHz
Collector Emitter Saturation Voltage 3.5V
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 70V
Emitter Base Voltage (VEBO) 5V
hFE Min 20

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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