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MJD45H11-1G

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-251-3 Short Leads, IPak, TO-251AA
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description Trans GP BJT PNP 80V 8A Automotive 3-Pin(3+Tab) IPAK Rail
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Inventory: 2292
Minimum: 1
Total Price: USD $1.67
Unit Price: USD $1.66742
≥1 USD $1.66742
≥10 USD $1.57304
≥100 USD $1.484
≥500 USD $1.4
≥1000 USD $1.32075
≥3000 USD $1.246

Technical Details

Supply Chain

Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 15 hours ago)

Physical

Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount NO
Number of Pins 4
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2003
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -80V
Max Power Dissipation 1.75W
Peak Reflow Temperature (Cel) 260
Current Rating -8A
Frequency 90MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MJD45H11
Pin Count 4
JESD-30 Code R-PSIP-T3
Number of Elements 1
Element Configuration Single
Power Dissipation 1.75W
Case Connection COLLECTOR
Transistor Application SWITCHING
Halogen Free Halogen Free
Gain Bandwidth Product 90MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A 1V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 40MHz
Collector Emitter Saturation Voltage 1V
Collector Base Voltage (VCBO) 5V
Emitter Base Voltage (VEBO) 5V
hFE Min 60

Dimensions

Height 6.22mm
Length 6.73mm
Width 2.38mm

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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