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BD179G
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-225AA, TO-126-3
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
TRANS NPN 80V 3A TO-225
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Inventory: 5135
Minimum: 1
Total Price: USD $0.14
Unit Price: USD $0.1387
≥1 USD $0.1387
≥500 USD $0.114
≥1000 USD $0.1102
≥2000 USD $0.1064
≥5000 USD $0.10355
≥10000 USD $0.09215
Technical Details
Physical
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Dimensions
Height 6.35mm
Length 31.75mm
Width 6.35mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -65°C~150°C TJ
Packaging Bulk
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation 30W
Peak Reflow Temperature (Cel) 260
Current Rating 3A
Frequency 3MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BD179
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 30W
Transistor Application AMPLIFIER
Gain Bandwidth Product 3MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA 2V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 800mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage 800mV
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 63
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