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MJD31C1G
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-251-3 Short Leads, IPak, TO-251AA
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
ON Semi MJD31C1G NPN Bipolar Transistor; 3 A; 100 V; 3-Pin IPAK
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Inventory: 4367
Minimum: 1
Total Price: USD $0.54
Unit Price: USD $0.5377
≥1 USD $0.5377
≥10 USD $0.4408
≥100 USD $0.4275
≥500 USD $0.41325
≥1000 USD $0.39995
Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Physical
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount NO
Number of Pins 4
Transistor Element Material SILICON
Technical
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 100V
Max Power Dissipation 1.56W
Peak Reflow Temperature (Cel) 260
Current Rating 3A
Frequency 3MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MJD31
Pin Count 4
JESD-30 Code R-PSIP-T3
Number of Elements 1
Element Configuration Single
Power Dissipation 1.56W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product 3MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 3A 4V
Current - Collector Cutoff (Max) 50μA
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A
Collector Emitter Breakdown Voltage 10V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage 1.2V
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 25
Dimensions
Height 6.22mm
Length 6.73mm
Width 2.38mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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