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MJE182G
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-225AA, TO-126-3
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
Trans GP BJT NPN 80V 3A 3-Pin(3+Tab) TO-225 Box
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Inventory: 8933
Minimum: 1
Total Price: USD $0.27
Unit Price: USD $0.26885
≥1 USD $0.26885
≥10 USD $0.2204
≥30 USD $0.21375
≥100 USD $0.2071
≥500 USD $0.20045
≥1000 USD $0.17955
Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Physical
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Dimensions
Height 11.0998mm
Length 7.7978mm
Width 2.9972mm
Technical
Operating Temperature -65°C~150°C TJ
Packaging Bulk
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation 12.5W
Peak Reflow Temperature (Cel) 260
Current Rating 3A
Frequency 50MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MJE182
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 12.5W
Power - Max 1.5W
Transistor Application SWITCHING
Gain Bandwidth Product 50MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.7V @ 600mA, 3A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage 1.7V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 7V
hFE Min 50
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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