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BC858AE6327HTSA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description Tape & Reel (TR) Surface Mount PNP Single Bipolar (BJT) Transistor 125 @ 2mA 5V 100mA 330mW 250MHz
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Inventory: 8719
Minimum: 1
Total Price: USD $0.4
Unit Price: USD $0.400336
≥1 USD $0.400336
≥10 USD $0.377676
≥100 USD $0.356298
≥500 USD $0.336129
≥1000 USD $0.317108

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC -30V
Max Power Dissipation 330mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating -100mA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BC858
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Transistor Application SWITCHING
Gain Bandwidth Product 250MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 30V
Current - Collector (Ic) (Max) 100mA
Max Frequency 250MHz
Transition Frequency 250MHz
Collector Emitter Saturation Voltage 650mV
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 5V

Dimensions

Height 900μm
Length 2.9mm
Width 1.3mm

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

No data

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