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2N3811
Central Semiconductor CorpRoHS
/
Package TO-78-6 Metal Can
Category Transistors - Bipolar (BJT) - Arrays / Transistors - Bipolar (BJT) - Arrays
Description
Bulk Through Hole PNP SEPARATE 2ELEMENTS Bipolar (BJT) Transistor Array 300 @ 1mA 5V 50mA 600mW 100MHz
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Inventory: 3246
Minimum: 1
Total Price: USD $1.26
Unit Price: USD $1.264342
≥1 USD $1.264342
≥10 USD $1.192775
≥100 USD $1.125263
≥500 USD $1.061561
≥1000 USD $1.001475
Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-78-6 Metal Can
Surface Mount NO
Transistor Element Material SILICON
Compliance
RoHS Status Non-RoHS Compliant
Technical
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2017
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Additional Feature LOW NOISE
HTS Code 8541.21.00.95
Subcategory Other Transistors
Terminal Position BOTTOM
Terminal Form WIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code O-MBCY-W6
Qualification Status Not Qualified
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS
Power - Max 600mW
Polarity/Channel Type PNP
Transistor Type 2 PNP (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1mA 5V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 100μA
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 50mA
Transition Frequency 100MHz
Frequency - Transition 100MHz
Alternative Model
No data
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