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BC856BDW1T3G
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage 6-TSSOP, SC-88, SOT-363
Category Transistors - Bipolar (BJT) - Arrays / Transistors - Bipolar (BJT) - Arrays
Description
ON Semi BC856BDW1T3G Dual PNP Bipolar Transistor; 0.1 A; 65 V; 6-Pin SOT-363
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Inventory: 9818
Minimum: 1
Total Price: USD $0.05
Unit Price: USD $0.046071
≥1 USD $0.046071
≥500 USD $0.033878
≥1000 USD $0.028234
≥2000 USD $0.025901
≥5000 USD $0.024207
≥10000 USD $0.022517
≥15000 USD $0.02178
≥50000 USD $0.021414
Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Physical
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -65V
Max Power Dissipation 380mW
Terminal Form GULL WING
Current Rating -100mA
Frequency 100MHz
Pin Count 6
Reference Standard AEC-Q101
Number of Elements 2
Polarity PNP
Element Configuration Dual
Power Dissipation 380mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 100MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 65V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 65V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage -650mV
Max Breakdown Voltage 65V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) -5V
hFE Min 220
Dimensions
Height 950μm
Length 2.08mm
Width 1.25mm
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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