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ZXTD09N50DE6TA

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package SOT-23-6
Category Transistors - Bipolar (BJT) - Arrays / Transistors - Bipolar (BJT) - Arrays
Description Bipolar Transistors - BJT Dual 50V NPN
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Inventory: 3880
Minimum: 1
Total Price: USD $0.4
Unit Price: USD $0.4028
≥1 USD $0.4028
≥10 USD $0.3306
≥100 USD $0.32015
≥500 USD $0.31065
≥1000 USD $0.3002

Technical Details

Supply Chain

Factory Lead Time 15 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6
Weight 14.996898mg
Transistor Element Material SILICON

Dimensions

Height 1.3mm
Length 3.1mm
Width 1.8mm

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 50V
Max Power Dissipation 1.7W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 2A
Frequency 215MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZXTD09N50D
Pin Count 6
Number of Elements 2
Polarity NPN
Element Configuration Dual
Power Dissipation 1.7W
Power - Max 1.1W
Transistor Application SWITCHING
Gain Bandwidth Product 215MHz
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA 2V
Current - Collector Cutoff (Max) 10nA
Vce Saturation (Max) @ Ib, Ic 270mV @ 50mA, 1A
Collector Emitter Breakdown Voltage 50V
Transition Frequency 215MHz
Collector Emitter Saturation Voltage 160mV
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 1A

Alternative Model

UNR32A3G0L
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