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MMDT5451-7-F
Diodes IncorporatedRoHS 
RoHS compliant
RoHS compliantPackage 6-TSSOP, SC-88, SOT-363
Category Transistors - Bipolar (BJT) - Arrays / Transistors - Bipolar (BJT) - Arrays
Description
Trans GP BJT NPN/PNP 160V/150V 0.2A 6-Pin SOT-363 T/R
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Inventory: 1441
Minimum: 1
Total Price: USD $0.08
Unit Price: USD $0.08075
≥1 USD $0.08075
≥10 USD $0.0665
≥100 USD $0.0646
≥500 USD $0.0627
≥1000 USD $0.05985
Technical Details
Supply Chain
Factory Lead Time 19 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Weight 6.010099mg
Transistor Element Material SILICON
Dimensions
Height 1mm
Length 2.2mm
Width 1.35mm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC 160V
Max Power Dissipation 200mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 200mA
Frequency 300MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MMDT5451
Pin Count 6
Number of Elements 2
Polarity NPN, PNP
Element Configuration Dual
Power Dissipation 200mW
Transistor Application SWITCHING
Gain Bandwidth Product 300MHz
Transistor Type NPN, PNP
Collector Emitter Voltage (VCEO) 200mV
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V / 60 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 150V
Voltage - Collector Emitter Breakdown (Max) 160V 150V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 200mV
Max Breakdown Voltage 150V
Collector Base Voltage (VCBO) 180V
Emitter Base Voltage (VEBO) -5V
hFE Min 60
Continuous Collector Current -200mA
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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