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MMDT3904-7-F

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package 6-TSSOP, SC-88, SOT-363
Category Transistors - Bipolar (BJT) - Arrays / Transistors - Bipolar (BJT) - Arrays
Description DIODES INC. - MMDT3904-7-F - Bipolar Transistor Array, NPN, 40 V, 200 mW, 200 mA, 100 hFE, SOT-363
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Inventory: 3400
Minimum: 20
Total Price: USD $1.61
Unit Price: USD $0.08075
≥20 USD $0.08075
≥200 USD $0.0665
≥600 USD $0.0646
≥3000 USD $0.0627

Technical Details

Supply Chain

Factory Lead Time 19 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6
Weight 6.010099mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 40V
Max Power Dissipation 200mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 200mA
Frequency 300MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MMDT3904
Pin Count 6
Reference Standard AEC-Q101
Number of Elements 2
Polarity NPN
Element Configuration Dual
Power Dissipation 200mW
Turn On Delay Time 70 ns
Transistor Application SWITCHING
Gain Bandwidth Product 300MHz
Transistor Type 2 NPN (Dual)
Turn-Off Delay Time 250 ns
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 300MHz
Collector Emitter Saturation Voltage 300mV
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
hFE Min 100
Continuous Collector Current 200mA

Dimensions

Height 1mm
Length 2.2mm
Width 1.35mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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