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BFP193E6327HTSA1
Infineon TechnologiesRoHS 
RoHS compliant
RoHS compliantPackage TO-253-4, TO-253AA
Category Transistors - Bipolar (BJT) - RF / Transistors - Bipolar (BJT) - RF
Description
TRANSISTOR NPN RF 12V SOT-143
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Inventory: 5283
Minimum: 1
Total Price: USD $0.12
Unit Price: USD $0.121574
≥1 USD $0.121574
≥10 USD $0.114682
≥100 USD $0.108192
≥500 USD $0.102066
≥1000 USD $0.096295
Technical Details
Supply Chain
Factory Lead Time 4 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-253-4, TO-253AA
Number of Pins 4
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 12V
Max Power Dissipation 580mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 80mA
Frequency 8GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFP193
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 580mW
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Halogen Free Not Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 80mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 30mA 8V
Gain 12dB ~ 18dB
Current - Collector (Ic) (Max) 80mA
Transition Frequency 8000MHz
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 2V
Collector-Base Capacitance-Max 0.9pF
Noise Figure (dB Typ @ f) 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Dimensions
Height 1mm
Length 2.9mm
Width 1.3mm
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