Operating Temperature -65°C~200°C TJ
Packaging Bulk
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory Other Transistors
Terminal Position BOTTOM
Terminal Form WIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code O-MBCY-W4
Number of Elements 1
Configuration SINGLE
Power - Max 200mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 3mA 1V
Gain 15dB
Voltage - Collector Emitter Breakdown (Max) 12V
Current - Collector (Ic) (Max) 50mA
Transition Frequency 900MHz
Frequency - Transition 2GHz
Power Dissipation-Max (Abs) 0.3W
VCEsat-Max 0.4 V
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 1pF
Noise Figure (dB Typ @ f) 4.5dB @ 200MHz