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MMBTH81
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Transistors - Bipolar (BJT) - RF / Transistors - Bipolar (BJT) - RF
Description
MMBTH81 Series 20 V CE Breakdown .05 A PNP RF Transistor - SOT-23
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Inventory: 5247
Minimum: 5
Total Price: USD $0.97
Unit Price: USD $0.1938
≥5 USD $0.1938
≥50 USD $0.1596
≥150 USD $0.1539
≥500 USD $0.14915
≥3000 USD $0.1444
≥6000 USD $0.1292
Technical Details
Supply Chain
Factory Lead Time 42 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Dimensions
Height 1.11mm
Length 2.92mm
Width 1.3mm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -20V
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating -50mA
Frequency 600MHz
Base Part Number MMBTH81
Number of Elements 1
Element Configuration Single
Power Dissipation 225mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 600MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA 10V
Collector Emitter Breakdown Voltage 20V
Transition Frequency 600MHz
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 3V
hFE Min 60
Max Junction Temperature (Tj) 150°C
Continuous Collector Current 50mA
Collector-Base Capacitance-Max 0.85pF
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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