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MRF8S21200HSR6

NXP USA Inc.
RoHS
RoHS RoHS compliant
Package NI-1230S
Category Transistors - FETs, MOSFETs - RF / Transistors - FETs, MOSFETs - RF
Description FET RF 2CH 65V 2.14GHZ NI-1230HS
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Inventory: 1587
Minimum: 1
Total Price: USD $71.87
Unit Price: USD $71.8694
≥1 USD $71.8694
≥200 USD $69.6236
≥500 USD $67.3778
≥1000 USD $65.132

Technical Details

Supply Chain

Factory Lead Time 10 Weeks

Physical

Package / Case NI-1230S
Surface Mount YES
Transistor Element Material SILICON

Technical

Packaging Tape & Reel (TR)
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 4
ECCN Code EAR99
Voltage - Rated 65V
HTS Code 8541.29.00.75
Subcategory FET General Purpose Power
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 2.14GHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MRF8S21200
JESD-30 Code R-CDFP-F4
Qualification Status Not Qualified
Operating Temperature (Max) 225°C
Number of Elements 2
Configuration COMMON SOURCE, 2 ELEMENTS
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Current - Test 1.4A
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS (Dual)
Gain 18.1dB
DS Breakdown Voltage-Min 65V
Power - Output 48W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V

Compliance

RoHS Status ROHS3 Compliant

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