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DXT5401-13

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package TO-243AA
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description Bipolar Transistors - BJT 1W -150V
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Inventory: 5891
Minimum: 1
Total Price: USD $0.28
Unit Price: USD $0.28405
≥1 USD $0.28405
≥10 USD $0.23275
≥100 USD $0.2261
≥500 USD $0.2185
≥1000 USD $0.2109

Technical Details

Supply Chain

Factory Lead Time 8 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 51.993025mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 1W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 300MHz
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 300MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 150V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 150V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage -500mV
Max Breakdown Voltage 150V
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 160V
Emitter Base Voltage (VEBO) -5V

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

Dimensions

Height 1.6mm
Length 4.6mm
Width 2.6mm

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