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2DB1132P-13
Diodes IncorporatedRoHS 
RoHS compliant
RoHS compliantPackage TO-243AA
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
TRANS PNP BIPO 32V SOT89-3
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Inventory: 2199
Minimum: 1
Total Price: USD $0.8
Unit Price: USD $0.800766
≥1 USD $0.800766
≥10 USD $0.755433
≥100 USD $0.712671
≥500 USD $0.672334
≥1000 USD $0.63428
Technical Details
Supply Chain
Factory Lead Time 7 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 51.993025mg
Transistor Element Material SILICON
Dimensions
Height 1.5mm
Length 4.5mm
Width 2.48mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 1W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 190MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number 2DB1132
Pin Count 3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 190MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 32V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 100mA 3V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 32V
Transition Frequency 190MHz
Max Breakdown Voltage 32V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 5V
hFE Min 82
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