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2DD2661-13

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package TO-243AA
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description DIODES INC. 2DD2661-13 Bipolar (BJT) Single Transistor, NPN, 12 V, 170 MHz, 900 mW, 1 A, 270 hFE
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Inventory: 4774
Minimum: 1
Total Price: USD $0.54
Unit Price: USD $0.5377
≥1 USD $0.5377
≥10 USD $0.4408
≥100 USD $0.4275
≥500 USD $0.41325
≥1000 USD $0.39995

Technical Details

Supply Chain

Factory Lead Time 15 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 51.993025mg
Transistor Element Material SILICON
Manufacturer Package Identifier 2DD2661-13

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 900mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 170MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number 2DD2661
Pin Count 3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element Configuration Single
Power Dissipation 2W
Case Connection COLLECTOR
Power - Max 900mW
Transistor Application SWITCHING
Gain Bandwidth Product 170MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 200mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 180mV @ 50mA, 1A
Collector Emitter Breakdown Voltage 12V
Transition Frequency 170MHz
Collector Emitter Saturation Voltage 180mV
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) 15V
Emitter Base Voltage (VEBO) 6V

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

Dimensions

Height 1.5mm
Length 4.5mm
Width 2.5mm

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