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BC556ATA
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
Bipolar Transistors - BJT PNP -65V -100mA HFE/220
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Inventory: 7754
Minimum: 1
Total Price: USD $0.45
Unit Price: USD $0.452618
≥1 USD $0.452618
≥10 USD $0.427001
≥100 USD $0.402831
≥500 USD $0.380026
≥1000 USD $0.358518
Technical Details
Supply Chain
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Physical
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 240mg
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tape & Box (TB)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -65V
Max Power Dissipation 500mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating -100mA
Frequency 150MHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BC556
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 500mW
Transistor Application SWITCHING
Gain Bandwidth Product 150MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 65V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 65V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage -250mV
Max Breakdown Voltage 65V
Collector Base Voltage (VCBO) -80V
Emitter Base Voltage (VEBO) -5V
hFE Min 110
Dimensions
Height 5.33mm
Length 5.2mm
Width 4.19mm
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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