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BU508AW
STMicroelectronicsRoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
BU508AW Series NPN 700 V 8 A High Voltage Power Transistor - TO-247
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Inventory: 4859
Minimum: 1
Total Price: USD $17.45
Unit Price: USD $17.4515
≥1 USD $17.4515
≥10 USD $14.31935
≥100 USD $13.8719
≥500 USD $13.42445
≥1000 USD $12.977
Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Physical
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tube
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 125W
Base Part Number BU508
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 125W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 700V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 100mA 5V
Current - Collector Cutoff (Max) 200μA
Vce Saturation (Max) @ Ib, Ic 1V @ 1.6A, 4.5A
Collector Emitter Breakdown Voltage 700V
Collector Emitter Saturation Voltage 1V
Emitter Base Voltage (VEBO) 9V
hFE Min 10
Max Junction Temperature (Tj) 150°C
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 24.45mm
Length 15.75mm
Width 5.15mm
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