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2N6491G

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description TRANS PNP 80V 15A TO220AB
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Inventory: 3245
Minimum: 1
Total Price: USD $0.68
Unit Price: USD $0.68115
≥1 USD $0.68115
≥10 USD $0.55955
≥100 USD $0.5415
≥500 USD $0.5244
≥1000 USD $0.50635

Technical Details

Supply Chain

Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)

Physical

Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON

Dimensions

Height 15.75mm
Length 10.28mm
Width 4.82mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LEADFORM OPTIONS ARE AVAILABLE
Subcategory Other Transistors
Voltage - Rated DC -80V
Max Power Dissipation 1.8W
Peak Reflow Temperature (Cel) 260
Current Rating 15A
Frequency 5MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number 2N6491
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1.8W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 5MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5A 4V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 3.5V @ 5A, 15A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 5MHz
Collector Emitter Saturation Voltage 3.5V
Collector Base Voltage (VCBO) 90V
Emitter Base Voltage (VEBO) 5V
hFE Min 20

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