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2N6388G
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
ON SEMICONDUCTOR - 2N6388G - Bipolar (BJT) Single Transistor, Darlington, NPN, 80 V, 65 W, 10 A, 20 hFE
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Inventory: 4
Minimum: 1
Total Price: USD $0.42
Unit Price: USD $0.41895
≥1 USD $0.41895
≥10 USD $0.3439
≥50 USD $0.33345
Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Technical
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2006
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Voltage - Rated DC 80V
Max Power Dissipation 2W
Current Rating 10A
Base Part Number 2N6388
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 65W
Power - Max 2W
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A 3V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 3V @ 100mA, 10A
Collector Emitter Breakdown Voltage 80V
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 10A
Collector Emitter Saturation Voltage 2V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 1000
Continuous Collector Current 10A
Dimensions
Height 4.82mm
Length 15.75mm
Width 10.28mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Physical
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 4.535924g
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