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BD140-16
STMicroelectronicsRoHS 
RoHS compliant
RoHS compliantPackage TO-225AA, TO-126-3
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
Bipolar Transistors - BJT PNP Silicon Trnsistr
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Inventory: 1531
Minimum: 1
Total Price: USD $0.12
Unit Price: USD $0.118261
≥1 USD $0.118261
≥10 USD $0.11157
≥100 USD $0.105259
≥500 USD $0.099296
≥1000 USD $0.093679
Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 months ago)
Technical
Operating Temperature 150°C TJ
Packaging Tube
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 1.25W
Base Part Number BD140
Number of Elements 1
Element Configuration Single
Power Dissipation 1.25W
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) -80V
Max Collector Current -3A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 2V 150MA
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 80V
Current - Collector (Ic) (Max) 1.5A
Transition Frequency 75MHz
Collector Emitter Saturation Voltage -500mV
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) -80V
Emitter Base Voltage (VEBO) -5V
hFE Min 25
Max Junction Temperature (Tj) 150°C
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Dimensions
Height 13.2mm
Length 7.8mm
Width 2.7mm
Physical
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3
Transistor Element Material SILICON
Manufacturer Package Identifier SOT-32-0016114E
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