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2SA1313-Y,LF
Toshiba Semiconductor and StorageRoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
Trans GP BJT PNP 50V 0.5A 3-Pin S-Mini Embossed T/R
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Pricing & Ordering
Inventory: 4755
Minimum: 1
Total Price: USD $0.1
Unit Price: USD $0.0969
≥1 USD $0.0969
≥500 USD $0.0798
≥1000 USD $0.07695
≥2000 USD $0.07505
≥5000 USD $0.0722
≥10000 USD $0.0646
Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package S-Mini
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 200mW
Polarity PNP
Power - Max 200mW
Gain Bandwidth Product 200MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 50V
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 500mA
Collector Emitter Saturation Voltage -100mV
Max Breakdown Voltage 50V
Frequency - Transition 200MHz
Collector Base Voltage (VCBO) -50V
Emitter Base Voltage (VEBO) -5V
hFE Min 25
Continuous Collector Current -500mA
Dimensions
Height 1.1mm
Length 2.9mm
Width 1.5mm
Compliance
RoHS Status RoHS Compliant
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