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2N3904TA
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
Trans GP BJT NPN 40V 0.2A 625mW 3-Pin TO-92 Fan-Fold
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Pricing & Ordering
Inventory: 5
Minimum: 5
Total Price: USD $0.56
Unit Price: USD $0.11115
≥5 USD $0.11115
≥50 USD $0.0912
≥150 USD $0.08835
Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Physical
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins 3
Weight 240mg
Transistor Element Material SILICON
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 8.77mm
Length 5.2mm
Width 4.19mm
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 40V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Current Rating 200mA
Frequency 300MHz
Base Part Number 2N3904
Number of Elements 1
Element Configuration Single
Power Dissipation 625mW
Transistor Application SWITCHING
Gain Bandwidth Product 300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 300MHz
Collector Emitter Saturation Voltage 300mV
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
hFE Min 100
Max Junction Temperature (Tj) 150°C
Turn Off Time-Max (toff) 250 ns
Turn On Time-Max (ton) 70 ns
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