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FZT851TA

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package TO-261-4, TO-261AA
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description Trans GP BJT NPN 60V 6A 4-Pin(3+Tab) SOT-223 T/R
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Inventory: 952
Minimum: 1
Total Price: USD $0.83
Unit Price: USD $0.8303
≥1 USD $0.8303
≥10 USD $0.68115
≥30 USD $0.66025
≥100 USD $0.6384
≥500 USD $0.6175

Technical Details

Supply Chain

Factory Lead Time 15 Weeks

Dimensions

Height 1.65mm
Length 6.7mm
Width 3.7mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Termination SMD/SMT
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 60V
Max Power Dissipation 3W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 6A
Frequency 130MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number FZT851
JESD-30 Code R-PDSO-G4
Number of Elements 1
Element Configuration Single
Power Dissipation 3W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 130MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 6A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 2A 1V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 375mV @ 300mA, 6A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 130MHz
Collector Emitter Saturation Voltage 375mV
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 150V
Emitter Base Voltage (VEBO) 6V
hFE Min 100
Continuous Collector Current 6A

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON

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