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MJD2955T4G
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-252-3, DPak (2 Leads + Tab), SC-63
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
ON SEMICONDUCTOR - MJD2955T4G - BIPOLAR TRANSISTOR, DUAL N/P CHANNEL 60V
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Inventory: 8968
Minimum: 1
Total Price: USD $0.21
Unit Price: USD $0.21185
≥1 USD $0.21185
≥10 USD $0.17385
≥100 USD $0.1691
≥500 USD $0.1634
≥1000 USD $0.1577
Technical Details
Supply Chain
Factory Lead Time 22 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Physical
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2002
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation 1.75W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -10A
Frequency 2MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MJD2955
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 20W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product 2MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A 4V
Current - Collector Cutoff (Max) 50μA
Vce Saturation (Max) @ Ib, Ic 8V @ 3.3A, 10A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 2MHz
Collector Emitter Saturation Voltage 1.1V
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 70V
Emitter Base Voltage (VEBO) 5V
hFE Min 20
Max Junction Temperature (Tj) 150°C
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Dimensions
Height 2.38mm
Length 6.73mm
Width 6.22mm
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