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FZT849TA
Diodes IncorporatedRoHS 
RoHS compliant
RoHS compliantPackage TO-261-4, TO-261AA
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
TRANS NPN 30V 7A SOT-223
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Inventory: 566
Minimum: 1
Total Price: USD $0.54
Unit Price: USD $0.5396
≥1 USD $0.5396
≥10 USD $0.4427
≥30 USD $0.4294
≥100 USD $0.41515
≥500 USD $0.4009
Technical Details
Supply Chain
Factory Lead Time 15 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Dimensions
Height 1.8mm
Length 6.7mm
Width 3.7mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2000
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 30V
Max Power Dissipation 3W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 7A
Frequency 100MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number FZT849
JESD-30 Code R-PDSO-G4
Number of Elements 1
Element Configuration Single
Power Dissipation 3W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 7A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A 1V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 350mV @ 300mA, 6.5A
Collector Emitter Breakdown Voltage 120V
Transition Frequency 100MHz
Collector Emitter Saturation Voltage 350mV
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 7V
hFE Min 100
Max Junction Temperature (Tj) 150°C
Continuous Collector Current 7A
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