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FZT853TA

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package TO-261-4, TO-261AA
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description FZT853 Series NPN 6 A 100 V SMT Silicon High Performance Transistor - SOT-223
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Inventory: 670
Minimum: 1
Total Price: USD $0.48
Unit Price: USD $0.48355
≥1 USD $0.48355
≥10 USD $0.3971
≥30 USD $0.38475
≥100 USD $0.3724
≥500 USD $0.36005

Technical Details

Supply Chain

Factory Lead Time 15 Weeks

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Voltage - Rated DC 100V
Max Power Dissipation 3W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 6A
Frequency 130MHz
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number FZT853
Number of Elements 1
Element Configuration Single
Power Dissipation 3W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 130MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 6A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 2A 2V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 340mV @ 500mA, 5A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 130MHz
Collector Emitter Saturation Voltage 340mV
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 200V
Emitter Base Voltage (VEBO) 6V
Continuous Collector Current 6A

Dimensions

Height 1.65mm
Length 6.7mm
Width 3.7mm

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 7.994566mg
Transistor Element Material SILICON

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