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FMMT593TA
Diodes IncorporatedRoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
TRANS PNP 100V 1A SOT23-3
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Inventory: 5713
Minimum: 1
Total Price: USD $0.19
Unit Price: USD $0.18905
≥1 USD $0.18905
≥10 USD $0.15485
≥100 USD $0.1501
≥500 USD $0.14535
≥1000 USD $0.1406
Technical Details
Supply Chain
Factory Lead Time 15 Weeks
Physical
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Dimensions
Height 1.1mm
Length 3mm
Width 1.4mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -100V
Max Power Dissipation 500mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -1A
Frequency 50MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number FMMT593
Number of Elements 1
Voltage 100V
Element Configuration Single
Current 1A
Power Dissipation 500mW
Transistor Application SWITCHING
Gain Bandwidth Product 50MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) -100V
Max Collector Current -1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage -100V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage -300mV
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) -120V
Emitter Base Voltage (VEBO) -7V
hFE Min 100
Max Junction Temperature (Tj) 150°C
Continuous Collector Current -1A
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