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MMBT2222ALT1G
ON SemiconductorRoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Transistors - Bipolar (BJT) - Single / Transistors - Bipolar (BJT) - Single
Description
TRANS NPN 40V 0.6A SOT23
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Inventory: 4108
Minimum: 1
Total Price: USD $0.02
Unit Price: USD $0.01632
≥1 USD $0.01632
≥500 USD $0.012
≥1000 USD $0.01
≥2000 USD $0.00917
≥5000 USD $0.00857
≥10000 USD $0.00798
≥15000 USD $0.00771
≥50000 USD $0.45374
Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Physical
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Type General Purpose
Subcategory Other Transistors
Voltage - Rated DC 40V
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 600mA
Frequency 300MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MMBT2222A
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 225mW
Transistor Application SWITCHING
Gain Bandwidth Product 300MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 300MHz
Collector Emitter Saturation Voltage 300mV
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 75V
Emitter Base Voltage (VEBO) 6V
hFE Min 100
Max Junction Temperature (Tj) 150°C
Turn Off Time-Max (toff) 285 ns
Dimensions
Height 1.11mm
Length 2.9mm
Width 1.3mm
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