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ULN2003A
STMicroelectronicsRoHS 
RoHS compliant
RoHS compliantPackage 16-DIP (0.300, 7.62mm)
Category Transistors - Bipolar (BJT) - Arrays / Transistors - Bipolar (BJT) - Arrays
Description
STMICROELECTRONICS - ULN2003A - Bipolares Transistor-Array, Darlington, NPN, 50 V, 2.25 W, 500 mA, 1000 hFE, DIP
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Inventory: 995
Minimum: 5
Total Price: USD $3.36
Unit Price: USD $0.67165
≥5 USD $0.67165
≥50 USD $0.551
≥150 USD $0.5339
≥500 USD $0.5168
≥2500 USD $0.4997
≥5000 USD $0.44745
Technical Details
Supply Chain
Factory Lead Time 15 Weeks
Dimensions
Height 4.59mm
Length 20mm
Width 7.1mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -40°C~85°C TA
Packaging Tube
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 16
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC 50V
Max Power Dissipation 2.25W
Terminal Position DUAL
Current Rating 500mA
Base Part Number ULN2003
Pin Count 16
Output Voltage 50V
Number of Elements 7
Polarity NPN
Configuration COMPLEX
Number of Channels 7
Output Current 500mA
Transistor Application SWITCHING
Transistor Type 7 NPN Darlington
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 350mA 2V
Current - Collector Cutoff (Max) 50μA
Vce Saturation (Max) @ Ib, Ic 1.6V @ 500μA, 350mA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 1.1V
VCEsat-Max 1.6 V
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