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ULN2065B
STMicroelectronicsRoHS 
RoHS compliant
RoHS compliantPackage 16-PowerDIP (0.300, 7.62mm)
Category Transistors - Bipolar (BJT) - Arrays / Transistors - Bipolar (BJT) - Arrays
Description
STMICROELECTRONICS ULN2065B Bipolar Transistor Array, Darlington, NPN, 80 V, 4.3 W, 1.5 A, DIP
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Inventory: 9004
Minimum: 1
Total Price: USD $5.14
Unit Price: USD $5.143
≥1 USD $5.143
≥10 USD $4.85189
≥100 USD $4.57725
≥500 USD $4.31816
≥1000 USD $4.07374
≥3000 USD $3.84315
Technical Details
Supply Chain
Factory Lead Time 13 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Physical
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case 16-PowerDIP (0.300, 7.62mm)
Number of Pins 16
Weight 1.627801g
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -20°C~85°C TA
Packaging Tube
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 16
ECCN Code EAR99
Voltage - Rated DC 50V
Max Power Dissipation 4.3W
Terminal Position DUAL
Number of Functions 4
Current Rating 1.5A
Base Part Number ULN206
Pin Count 16
Output Voltage 80V
Polarity NPN
Number of Channels 4
Output Current 1.75A
Power - Max 1W
Transistor Type 4 NPN Darlington (Quad)
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 1.75A
Vce Saturation (Max) @ Ib, Ic 1.5V @ 2.25mA, 1.5A
Collector Emitter Breakdown Voltage 80V
Input Characteristics STANDARD
Interface IC Type BUFFER OR INVERTER BASED PERIPHERAL DRIVER
Driver Number of Bits 4
Collector Emitter Saturation Voltage 1.5V
Turn On Time 1 μs
Turn Off Time 1.5 μs
Continuous Collector Current 1.5A
Built-in Protections TRANSIENT
Dimensions
Height 4.59mm
Length 20mm
Width 7.1mm
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