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FP10R12W1T4B11BOMA1
Infineon TechnologiesRoHS
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Package Module
Category Transistors - IGBTs - Modules / Transistors - IGBTs - Modules
Description
Trans IGBT Module N-CH 1200V 20A 105000mW 23-Pin EASY1B-2 Tray
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Inventory: 4834
Minimum: 1
Total Price: USD $71.61
Unit Price: USD $71.606879
≥1 USD $71.606879
≥200 USD $27.71138
≥500 USD $26.737209
≥1000 USD $26.256687
Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Number of Pins 23
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~150°C
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 23
ECCN Code EAR99
Max Power Dissipation 105W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 7
Configuration Three Phase Inverter
Case Connection ISOLATED
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.85V
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 20A
Turn On Time 108 ns
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 10A
Turn Off Time-Nom (toff) 500 ns
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 600pF @ 25V
Compliance
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Contains Lead
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