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FF200R12KS4HOSA1
Infineon TechnologiesRoHS
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Package Module
Category Transistors - IGBTs - Modules / Transistors - IGBTs - Modules
Description
IGBT Array & Module Transistor, N Channel, 275 A, 3.2 V, 1.4 kW, 1.2 kV, Module
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Inventory: 1524
Minimum: 1
Total Price: USD $74.29
Unit Price: USD $74.29174
≥1 USD $74.29174
≥10 USD $70.086554
≥100 USD $66.119387
≥500 USD $62.37678
≥1000 USD $58.846017
Technical Details
Supply Chain
Factory Lead Time 20 Weeks
Physical
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 7
Transistor Element Material SILICON
Technical
Operating Temperature -40°C~125°C
Published 2002
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
ECCN Code EAR99
Additional Feature FAST
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 7
Number of Elements 2
Configuration 2 Independent
Element Configuration Dual
Power Dissipation 1.4kW
Case Connection ISOLATED
Power - Max 1400W
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 275A
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 3.2V
Turn On Time 180 ns
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 200A
Turn Off Time-Nom (toff) 590 ns
NTC Thermistor No
Input Capacitance (Cies) @ Vce 13nF @ 25V
Compliance
RoHS Status RoHS Compliant
Alternative Model
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