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FP10R12W1T4BOMA1
Infineon TechnologiesRoHS
/
Package Module
Category Transistors - IGBTs - Modules / Transistors - IGBTs - Modules
Description
IGBT MODULE VCES 600V 100A
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Inventory: 3264
Minimum: 1
Total Price: USD $66.58
Unit Price: USD $66.579785
≥1 USD $66.579785
≥200 USD $25.765663
≥500 USD $24.859762
≥1000 USD $24.413376
Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Technical
Operating Temperature -40°C~150°C
Published 2002
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 23
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 23
Qualification Status Not Qualified
Number of Elements 7
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 105W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 20A
Turn On Time 108 ns
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 10A
Turn Off Time-Nom (toff) 500 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 600pF @ 25V
Physical
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Number of Pins 23
Transistor Element Material SILICON
Compliance
RoHS Status RoHS Compliant
Lead Free Contains Lead
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